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automotive power data sheet rev 1.3, 2012-01-16 smart high-side power switch smart high-side power switch profet bts711l1
data sheet 2 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 smart four channel highside power switch features ? overload protection ? current limitation ? short-circuit protection ? thermal shutdown ? overvoltage protection (including load dump) ? fast demagnetization of inductive loads ? reverse battery protection 1 ) ? undervoltage and overvoltage shutdown with auto-restart and hysteresis ? open drain diagnostic output ? open load detection in on-state ? cmos compatible input ? loss of ground and loss of v bb protection ? e lectro s tatic d ischarge ( esd ) protection application ? c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads ? all types of resistive, inductive and capacitive loads ? replaces electromechanical relays and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, monolithically integrated in smart sipmos ? technology. providing embedded protective functions. pin definitions and functions pin symbol function 1,10, 11,12, 15,16, 19,20 v bb positive power supply voltage . design the wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low thermal resistance 3 in1 input 1 .. 4 , activates channel 1 .. 4 in case of 5 in2 logic high signal 7 in3 9 in4 18 out1 output 1 .. 4 , protected high-side power output 17 out2 of channel 1 .. 4. design the wiring for the 14 out3 max. short circuit current 13 out4 4 st1/2 diagnostic feedback 1/2 of channel 1 and channel 2, open drain, low on failure 8 st3/4 diagnostic feedback 3/4 of channel 3 and channel 4, open drain, low on failure 2 gnd1/2 ground 1/2 of chip 1 (channel 1 and channel 2) 6 gnd3/4 ground 3/4 of chip 2 (channel 3 and channel 4) 1 ) with external current limit (e.g. resistor r gnd =150 ) in gnd connection, resistor in series with st connection, reverse load current limited by connected load. product summary overvoltage protection v bb(az) 43 v operating voltage v bb(on) 5.0 ... 34 v active channels: one two parallel four parallel on-state resistance r on 200 100 50 m nominal load current 1.9 2.8 4.4 a current limitation 4 4 4 a pin configuration (top view) v bb 1 ? 20 v bb gnd1/2 2 19 v bb in1 3 18 out1 st1/2 4 17 out2 in2 5 16 v bb gnd3/4 6 15 v bb in3 7 14 out3 st3/4 8 13 out4 in4 9 12 v bb v bb 10 11 v bb p-dso-20 pg-dso20 ? aec qualified ? green product (rohs compliant)
data sheet 3 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 block diagram four channels; open load detection in on state; ?
data sheet 4 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 maximum ratings at t j = 25c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 4) v bb 43 v supply voltage for full short circuit protection t j,start = -40 ...+150c v bb 34 v load current (short-circuit current, see page 5) i l self-limited a load dump protection 2 ) v loaddump = u a + v s , u a = 13.5 v r i 3 ) = 2 , t d = 200 ms; in = low or high, each channel loaded with r l = 7.1 , v load dump 4 ) 60 v operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc) 5 t a = 25c: (all channels active) t a = 85c: p tot 3.6 1.9 w inductive load switch-off ener gy dissipation, single pulse v bb = 12v, t j,start = 150c 5) , i l = 1.9 a, z l = 66 mh, 0 one channel: i l = 2.8 a, z l = 66 mh, 0 two parallel channels: i l = 4.4 a, z l = 66 mh, 0 four parallel channels: see diagrams on page 9 and page 10 e as 150 320 800 mj electrostatic discharge capability (esd) (human body model) v esd 1.0 kv input voltage (dc) v in -10 ... +16 v current through input pin (dc) current through status pin (dc) see internal circuit diagram page 8 i in i st 2.0 5.0 ma thermal resistance junction - soldering point 5),6) each channel: r thjs 16 k/w junction - ambient 5) one channel active: all channels active: r thja 44 35 2 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins, e.g. with a 150 resistor in the gnd connection and a 15 k resistor in series with the status pin. a resistor for input protection is integrated. 3) r i = internal resistance of the load dump test pulse generator 4) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839 5 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air. see page 15 6 ) soldering point: upper side of solder edge of device pin 15. see page 15
data sheet 5 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 electrical characteristics parameter and conditions, each of the four channels symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (v bb to out) i l = 1.8 a each channel, t j = 25c: t j = 150c: two parallel channels, t j = 25c: four parallel channels, t j = 25c: r on -- 165 320 83 42 200 400 100 50 m nominal load current one channel active: two parallel channels active: four parallel channels active: device on pcb 5) , t a = 85c, t j 150c i l(nom) 1.7 2.6 4.1 1.9 2.8 4.4 -- a output current while gnd disconnected or pulled up; v bb = 30 v, v in = 0, see diagram page 9 i l(gndhigh) -- -- 10 ma turn-on time to 90% v out : turn-off time to 10% v out : r l =12 , t j =-40...+150c t on t off 80 80 200 200 400 400 s slew rate on 10 to 30% v out , r l =12 , t j =-40...+150c: d v /dt on 0.1 -- 1 v/ s slew rate off 70 to 40% v out , r l =12 , t j =-40...+150c: -d v /dt off 0.1 -- 1 v/ s operating parameters operating voltage 7 ) t j =-40...+150c: v bb(on) 5.0 -- 34 v undervoltage shutdown t j =-40...+150c: v bb(under) 3.5 -- 5.0 v undervoltage restart t j =-40...+25c: t j =+150c: v bb(u rst) -- -- 5.0 7.0 v undervoltage restart of charge pump see diagram page 14 t j =-40...+150c: v bb(ucp) -- 5.6 7.0 v undervoltage hysteresis v bb(under) = v bb(u rst) - v bb(under) v bb(under) -- 0.2 -- v overvoltage shutdown t j =-40...+150c: v bb(over) 34 -- 43 v overvoltage restart t j =-40...+150c: v bb(o rst) 33 -- -- v overvoltage hysteresis t j =-40...+150c: v bb(over) -- 0.5 -- v overvoltage protection 8 ) t j =-40...+150c: i bb = 40 ma v bb(az) 42 47 -- v 7) at supply voltage increase up to v bb = 5.6 v typ without charge pump, v out v bb - 2 v 8) see also v on(cl) in circuit diagram on page 8.
data sheet 6 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 parameter and conditions, each of the four channels symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max standby current, all channels off t j =25c : v in =0 t j =150c: i bb(off) -- -- 28 44 60 70 a leakage output current (included in i bb(off) ) v in =0 i l(off) -- -- 12 a operating current 9) , v in = 5v, t j =-40...+150c i gnd = i gnd1/2 + i gnd3/4 , one channel on: four channels on: i gnd -- -- 2 8 3 12 ma protection functions 10) initial peak short circuit current limit, (see timing diagrams, page 1 3 ) each channel, t j =-40c: t j =25c: t j =+150c: i l(scp) 5.5 4.5 2.5 9.5 7.5 4.5 13 11 7 a two parallel channels twice the current of one channel four parallel channels four times the current of one channel repetitive short circuit current limit, t j = t jt each channel two parallel channels four parallel channels (see timing diagrams, page 1 3 ) i l(scr) -- -- -- 4 4 4 -- -- -- a initial short circuit shutdown time t j,start =-40c: t j,start = 25c: (see page 11 and timing diagrams on page 1 3 ) t off(sc) -- -- 48 29 -- -- ms output clamp (inductive load switch off) 11) at v on(cl) = v bb - v out v on(cl) -- 47 -- v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis t jt -- 10 -- k reverse battery reverse battery voltage 12 ) - v bb -- -- 32 v drain-source diode voltage (v out > v bb ) i l = - 1.9 a, t j = +150c - v on -- 610 -- mv 9 ) add i st , if i st > 0 10 ) integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation. 11 ) if channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest v on(cl) 12 ) requires a 150 resistor in gnd connection. the reverse load current through the intrinsic drain-source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratin gs page 3 and circuit page 8).
data sheet 7 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 parameter and conditions, each of the four channels symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max diagnostic characteristics open load detection current, (on-condition) each channel, t j = -40c: t j = 25c: t j = 150c: i l (ol) 1 10 10 10 -- -- -- 200 150 150 ma two parallel channels twice the current of one channel four parallel channels four times the current of one channel open load detection voltage 13 ) t j =-40..+150c: v out(ol) 2 3 4 v internal output pull down (out to gnd), v out =5v t j =-40..+150c: r o 41030k input and status feedback 14 ) input resistance (see circuit page 8) t j =-40..+150c: r i 2.5 3.5 6 k input turn-on threshold voltage t j =-40..+150c: v in(t+) 1.7 -- 3.5 v input turn-off threshold voltage t j =-40..+150c: v in(t-) 1.5 -- -- v input threshold hysteresis v in(t) -- 0.5 -- v off state input current v in = 0.4 v: t j =-40..+150c: i in(off) 1 -- 50 a on state input current v in = 5 v: t j =-40..+150c: i in(on) 20 50 90 a delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 13 ), t j =-40..+150c: t d(st ol4) 100 320 800 s delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 13 ), t j =-40..+150c: t d(st ol5) -- 5 20 s status invalid after positive input slope (open load) t j =-40..+150c: t d(st) -- 200 600 s status output (open drain) zener limit voltage t j =-40...+150c, i st = +1.6 ma: st low voltage t j =-40...+25c, i st = +1.6 ma: t j = +150c, i st = +1.6 ma: v st(high) v st(low) 5.4 -- -- 6.1 -- -- -- 0.4 0.6 v 13) external pull up resistor required for open load detection in off state. 14) if ground resistors r gnd are used, add the voltage drop across these resistors.
data sheet 8 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 truth table channel 1 and 2 chip 1 in1 in2 out1 out2 st1/2 st1/2 channel 3 and 4 (equivalent to channel 1 and 2) chip 2 in3 in4 out3 out4 st3/4 st3/4 bts 711l1 bts 712n1 normal operation l l h h l h l h l l h h l h l h h h h h h h h h open load channel 1 (3) l l h l h x z z h l h x h(l 15 ) ) h l l h h channel 2 (4) l h x l l h l h x z z h h(l 15 ) ) h l l h h short circuit to v bb channel 1 (3) l l h l h x h h h l h x l 16 ) h h(l 17 ) ) l 16) h h channel 2 (4) l h x l l h l h x h h h l 16) h h(l 17 ) ) l 16) h h overtemperature both channel l x h l h x l l l l l l h l l h l l channel 1 (3) l h x x l l x x h l h l channel 2 (4) x x l h x x l l h l h l undervoltage/ overvoltage x x l l h h l = "low" level x = don't care z = high impedance, potential depends on external circuit h = "high" level status signal valid after the time delay shown in the timing diagrams parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). if switching channel 1 to 4 in parallel, the status outputs st1/2 and st3/4 have to be configured as a 'wired or' function with a single pull-up resistor. terms leadframe (v bb ) is connected to pin 1,10,11,12,15,16,19,20 external r gnd optional; two resistors r gnd1/2 ,r gnd3/4 = 150 or a single resistor r gnd =75 for reverse battery protection up to the max. operating voltage. 15 ) with additional external pull up resistor 16) an external short of output to v bb in the off state causes an internal current from output to ground. if r gnd is used, an offset voltage at the gnd and st pins will occur and the v st low signal may be errorious. 17 ) low resistance to v bb may be detected by no-load-detection
data sheet 9 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 input circuit (esd protection), in1...4 esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). status output, st1/2 or st3/4 esd-zener diode: 6.1 v typ., max 5.0 ma; r st(on) < 380 at 1.6 ma, esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may resul t in a drift of the zener voltage (increase of up to 1 v). inductive and overvoltage output clamp, out1...4 v on clamped to v on(cl) = 47 v typ. overvoltage protection of logic part gnd1/2 or gnd3/4 v z1 = 6.1 v typ., v z2 = 47 v typ., r i = 3.5 k typ. , r gnd = 150 reverse battery protection r gnd = 150 , r i = 3.5 k typ , temperature protection is not active during inverse current operation. .
data sheet 10 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 open-load detection, out1...4 on-state diagnostic condition: v on < r on i l(ol) ; in high off-state diagnostic condition: v out > 3 v typ.; in low gnd disconnect (channel 1/2 or 3/4) any kind of load. in case of in = high is v out v in - v in(t+) . due to v gnd > 0, no v st = low signal available. gnd disconnect with gnd pull up (channel 1/2 or 3/4) any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd > 0, no v st = low signal available. v bb disconnect with energized inductive load for an inductive load current up to the limit defined by e as (max. ratings see page 3 and diagram on page 10) each switch is protected against loss of v bb . consider at your pcb layout that in the case of vbb dis- connection with energized inductive load the whole load current flows through the gnd connection.
data sheet 11 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 inductive load switch-off energy dissipation energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 : e as = i l l 2 r l ( v bb +|v out(cl) |) (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off (one channel) 5) t j,start = 150c, v bb = 12 v, r l =0 l [mh] i l [a] typ. on-state resistance
; i l = 1.8 a, in = high r on [mohm] v bb [v] typ. open load detection current in = high i l(ol) [ma] v bb [v]
data sheet 12 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 typ. standby current ; v bb = 9...34 v, in 1...4 = low i bb(off) [ a] t j [c] typ. initial short circuit shutdown time ; v bb =12 v t off(s c) [msec] 0 10 20 30 40 50 60 40 -25 0 25 50 75 100 125 150 t j, start [c]
data sheet 13 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 figure 1a: v bb turn on: figure 2a: switching a lamp: the initial peak current should be limited by the lamp and not by the initial short circuit current i l(scp) = 7.5 a typ. of the device. figure 2b: switching an inductive load *) if the time constant of load is too large, open-load-status may occur figure 3a: turn on into short circuit: shut down by overtemperature, restart by cooling heating up of the chip may require several milliseconds, depending on external conditions (t off(sc) vs. t j,start see page 11) timing diagrams timing diagrams are shown for chip 1 (channel 1/2). for chip 2 (channel 3/4) the diagrams are valid too. the channels 1 and 2, respectively 3 and 4, are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels
data sheet 14 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 figure 3b: turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) figure 4a: overtemperature: reset if t j < t jt figure 5a: open load: detection in on-state, open load occurs in on-state t d(st ol1) = 30 s typ., t d(st ol2) = 20 s typ figure 5b: open load: detection in on-state, turn on/off to open load t in2 channel 2: normal operation channel 1: open load the status delay time t d(stol4) allows to distinguish between the failure modes "open load in on-state" and "overtemperature".
data sheet 15 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 figure 5c: open load: detection in on- and off-state (with r ext ), turn on/off to open load d(st) in2 channel 2: normal operation t d(st ol5) depends on external circuitry because of high impedance figure 6a: undervoltage: v v bb(under) bb(u rst) bb(u cp) figure 6b: undervoltage restart of charge pump in = high, normal load conditions. charge pump starts at v bb(ucp) = 5.6 v typ. figure 7a: overvoltage: bb on(cl) v v bb(over) v bb(o rst)
data sheet 16 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 package outlines figure 1 pg-dso-20-31 / pg-dso-20-59 (plastic dual small outlin e package) (rohs-compliant) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-fre e soldering according to ipc/jedec j-std-020). please specify the package needed (e.g. green package) when placing an order 110 11 20 index marking 1) does not include plastic or metal protrusions of 0.15 max per side 2) does not include dam b ar protrusion of 0.05 max per side gps050 9 4 2.65 max 0.1 0.2 -0.1 2.45 -0.2 +0.15 0. 3 5 1.27 2) 0.2 24x -0.2 7.6 1) 0. 3 5 x 45? 0.2 3 8? max +0.0 9 +0.8 0. 3 10. 3 0.4 12.8 -0.2 1)
data sheet 17 rev 1.3, 2012-01-16 smart high-side power switch bts711l1 revision history version date changes rev. 1.3 2012-01-16 page 16: added package variant pg-dso-20-59 rev. 1.2 2010-03-16 page 6: changed reference to the timing diagram rev. 1.1 2009-07-13 page 1: added new coverpage page 6: initial short circuit shutdown time changed: t off(sc) -40 c to 48 ms t off(sc) 25 c to 29 ms v1.0 2008-04-18 creation of the green data sheet
edition 2012-01-16 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 1/17/12. all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the app lication of the device, infineon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation warranties of non-infringement of intellectual prop erty rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your near est infineon technologies office. infineon technologies components may only be used in lif e-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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